IRF744PBF

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Mfr.Part #
IRF744PBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 450V 8.8A TO220AB
Stock
44,773
In Stock :
44,773

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
8.7 ns
Operating Temperature :
-55°C~150°C TJ
Drain to Source Resistance :
630mOhm
Drain to Source Voltage (Vdss) :
450V
Published :
2009
Turn-Off Delay Time :
58 ns
Current - Continuous Drain (Id) @ 25°C :
8.8A Tc
Height :
9.01mm
Rds On (Max) @ Id, Vgs :
630mOhm @ 5.3A, 10V
Supplier Device Package :
TO-220AB
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Max Operating Temperature :
150°C
FET Type :
N-Channel
Fall Time (Typ) :
27 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Rise Time :
28ns
Packaging :
Tube
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Width :
4.7mm
Number of Channels :
1
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Weight :
6.000006g
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
450V
Vgs (Max) :
±20V
Power Dissipation-Max :
125W Tc
Continuous Drain Current (ID) :
8.8A
Rds On Max :
630 mΩ
Length :
10.41mm
Input Capacitance :
1.4nF
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Min Operating Temperature :
-55°C
Datasheets
IRF744PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF744PBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1, Number of Pins:3, IRF744PBF pinout, IRF744PBF datasheet PDF, IRF744PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF744PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF744PBF


N-Channel Tube 630mOhm @ 5.3A, 10V ±20V 1400pF @ 25V 80nC @ 10V 450V TO-220-3

IRF744PBF Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.8A amps.In this device, the drain-source breakdown voltage is 450V and VGS=450V, so the drain-source breakdown voltage is 450V in this case.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 630mOhm.A turn-on delay time of 8.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 450V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF744PBF Features


a continuous drain current (ID) of 8.8A
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 58 ns
single MOSFETs transistor is 630mOhm
a 450V drain to source voltage (Vdss)


IRF744PBF Applications


There are a lot of Vishay Siliconix
IRF744PBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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