IRF743
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- Mfr.Part #
- IRF743
- Manufacturer
- Harris Corporation
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 34,608
- In Stock ：
- 34,608
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 900mV @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 8.9A Ta
- FET Type :
- P-Channel
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 12V
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Input Capacitance (Ciss) (Max) @ Vds :
- 1877pF @ 10V
- Vgs (Max) :
- ±8V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 24mOhm @ 8.7A, 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- 8-SO
- Power Dissipation-Max :
- 2.5W Ta
- Datasheets
- IRF743
P-Channel Tube 24mOhm @ 8.7A, 4.5V ±8V 1877pF @ 10V 20nC @ 4.5V 12V 8-SOIC (0.154, 3.90mm Width)
IRF7433 Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
IRF7433 Features
-
Ultra Low On-Resistance
-
P-Channel MOSFET
-
Surface Mount
-
Available in Tape & Reel
IRF7433 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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