IRF7425TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Series :

HEXFET®

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

20ns

ECCN Code :

EAR99

Number of Pins :

8

JEDEC-95 Code :

MS-012AA

Lead Free :

Contains Lead

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

P-Channel

Current Rating :

-15A

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Voltage - Rated DC :

-20V

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 15A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Terminations :

8

RoHS Status :

Non-RoHS Compliant

Published :

2001

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

7980pF @ 15V

Continuous Drain Current (ID) :

15A

Pulsed Drain Current-Max (IDM) :

60A