IRF7425PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

7980pF @ 15V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 15A, 4.5V

Additional Feature :

ULTRA LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drain Current-Max (Abs) (ID) :

15A

Published :

2005

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.0082Ohm

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

60A

JEDEC-95 Code :

MS-012AA

ECCN Code :

EAR99

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual