IRF7424TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Turn-Off Delay Time :

150 ns

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

76 ns

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Element Configuration :

Single

Power Dissipation :

2.5W

Max Junction Temperature (Tj) :

150°C

Voltage - Rated DC :

-30V

Radiation Hardening :

No

Published :

2004

Number of Channels :

1

Current Rating :

-11A

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Resistance :

13.5mOhm

Dual Supply Voltage :

-30V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Rise Time :

23ns

ECCN Code :

EAR99

Height :

1.75mm

Number of Pins :

8

Threshold Voltage :

-2.5V

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Nominal Vgs :

-2.5 V

Width :

4.05mm

Length :

4.9784mm

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Row Spacing :

6.3 mm

FET Type :

P-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

-11A

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

4030pF @ 25V

Forward Voltage :

-1.2V

Power Dissipation-Max :

2.5W Ta

Transistor Element Material :

SILICON

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-30V

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 11A, 10V

Recovery Time :

60 ns