IRF7424PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

4030pF @ 25V

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

Packaging :

Tube

Power Dissipation-Max :

2.5W Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Published :

2004

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 11A, 10V

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.0135Ohm

Qualification Status :

Not Qualified

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

11A

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Pulsed Drain Current-Max (IDM) :

47A

ECCN Code :

EAR99