IRF7424GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Width :

3.9878mm

FET Type :

P-Channel

Mounting Type :

Surface Mount

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Supplier Device Package :

8-SO

Fall Time (Typ) :

76 ns

Drain to Source Breakdown Voltage :

-30V

Number of Pins :

8

Drain to Source Resistance :

13.5mOhm

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.5W

Turn On Delay Time :

15 ns

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Rise Time :

23ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance :

4.03nF

Power Dissipation-Max :

2.5W Ta

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4030pF @ 25V

Series :

HEXFET®

Rds On Max :

13.5 mΩ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

13.5mOhm @ 11A, 10V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

150 ns

Published :

2009

Mount :

Surface Mount

Height :

1.4986mm

Continuous Drain Current (ID) :

11A

Min Operating Temperature :

-55°C

Length :

4.9784mm

Vgs (Max) :

±20V