IRF7422D2PBF
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- Mfr.Part #
- IRF7422D2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4.3A 8SO
- Stock
- 24,023
- In Stock ：
- 24,023
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 8.1 ns
- Radiation Hardening :
- No
- Series :
- FETKY™
- Element Configuration :
- Single
- Fall Time (Typ) :
- 33 ns
- FET Type :
- P-Channel
- Rise Time :
- 26ns
- Dual Supply Voltage :
- -20V
- Max Forward Surge Current (Ifsm) :
- 20A
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Ta
- Drain Current-Max (Abs) (ID) :
- 4.6A
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- RoHS Status :
- RoHS Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- FET Feature :
- Schottky Diode (Isolated)
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 2.2A, 4.5V
- Forward Voltage :
- 520mV
- Width :
- 3.9878mm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Nominal Vgs :
- 4 V
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 4.5V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±12V
- Current Rating :
- -4.3A
- Threshold Voltage :
- 4V
- Published :
- 2004
- Turn-Off Delay Time :
- 26 ns
- Gate to Source Voltage (Vgs) :
- 12V
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 4.9784mm
- Forward Current :
- 4A
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Height :
- 1.4986mm
- Continuous Drain Current (ID) :
- -4.3A
- Drain to Source Voltage (Vdss) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Drain to Source Breakdown Voltage :
- -20V
- Power Dissipation :
- 2W
- Power Dissipation-Max :
- 2W Ta
- Datasheets
- IRF7422D2PBF
P-Channel Tube 90m Ω @ 2.2A, 4.5V ±12V 610pF @ 15V 22nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7422D2PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 610pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -4.3A.With a drain-source breakdown voltage of -20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -20V.4.6A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.1 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.7V 4.5V) reduces this device's overall power consumption.
IRF7422D2PBF Features
a continuous drain current (ID) of -4.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 26 ns
a threshold voltage of 4V
a 20V drain to source voltage (Vdss)
IRF7422D2PBF Applications
There are a lot of Infineon Technologies
IRF7422D2PBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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