IRF7420TRPBF-1
- Mfr.Part #
- IRF7420TRPBF-1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET
- Stock
- 29,145
- In Stock :
- 29,145
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A (Ta)
- FET Type :
- P-Channel
- Rise Time :
- 8.8 ns
- Continuous Drain Current (ID) :
- 11.5 A
- RoHS :
- Compliant
- Vgs(th) (Max) @ Id :
- 900mV @ 250μA
- Power Dissipation (Max) :
- 2.5W (Ta)
- Rds On (Max) @ Id, Vgs :
- 14mOhm @ 11.5A, 4.5V
- Package Quantity :
- 4000
- Product Status :
- Last Time Buy
- Max Junction Temperature (Tj) :
- 150 °C
- Reach Compliance Code :
- Compliant
- Manufacturer :
- Infineon Technologies AG
- Gate to Source Voltage (Vgs) :
- 8 V
- Lifecycle Status :
- Production (Last Updated: 2 years ago)
- Series :
- HEXFET®
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 3529 pF @ 10 V
- Technology :
- MOSFET (Metal Oxide)
- Packaging :
- Tape and Reel
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs (Max) :
- ±8V
- Min Operating Temperature :
- -55 °C
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.8V, 4.5V
- Mount :
- Surface Mount
- FET Feature :
- -
- Supplier Device Package :
- 8-SO
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 38 nC @ 4.5 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- ECCN Code :
- EAR99
- On-State Resistance :
- 14 mΩ
- Drain to Source Voltage (Vdss) :
- 12 V
- Max Operating Temperature :
- 150 °C
- Package :
- Bulk
- Datasheets
- IRF7420TRPBF-1
MOSFET (Metal Oxide) P-Channel Tape & Reel 14mOhm @ 11.5A, 4.5V ±8V 3529 pF @ 10 V 38 nC @ 4.5 V 12 V 8-SOIC (0.154, 3.90mm Width)
IRF7420TRPBF-1 Overview
A device's maximum input capacitance is 3529 pF @ 10 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11.5 A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8 V.To operate this transistor, you need to apply a 12 V drain to source voltage (Vdss).
IRF7420TRPBF-1 Features
a continuous drain current (ID) of 11.5 A
a 12 V drain to source voltage (Vdss)
IRF7420TRPBF-1 Applications
There are a lot of Infineon
IRF7420TRPBF-1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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