IRF7420TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

14m Ω @ 11.5A, 4.5V

JESD-609 Code :

e3

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3529pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Vgs(th) (Max) @ Id :

900mV @ 250μA

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

11.5A

JESD-30 Code :

R-PDSO-G8

Terminal Position :

Dual

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

46A

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 4.5V

Drain to Source Voltage (Vdss) :

12V

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±8V

Number of Terminations :

8

Additional Feature :

ULTRA LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Published :

2006

Drain-source On Resistance-Max :

0.014Ohm

DS Breakdown Voltage-Min :

12V

Configuration :

SINGLE WITH BUILT-IN DIODE