IRF7420

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.014Ohm

Surface Mount :

yes

Published :

2006

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

12V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rds On (Max) @ Id, Vgs :

14m Ω @ 11.5A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

3529pF @ 10V

Drain Current-Max (Abs) (ID) :

11.5A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

900mV @ 250μA

Pulsed Drain Current-Max (IDM) :

46A

Number of Terminations :

8

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

12V

Vgs (Max) :

±8V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

MS-012AA

Terminal Finish :

NOT SPECIFIED

Transistor Application :

SWITCHING