IRF7416TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

60 ns

Number of Pins :

8

Element Configuration :

Single

Vgs (Max) :

±20V

Radiation Hardening :

No

Lead Free :

Lead Free

FET Type :

P-Channel

Row Spacing :

6.3 mm

Rds On (Max) @ Id, Vgs :

20m Ω @ 5.6A, 10V

Dual Supply Voltage :

-30V

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

370 mJ

Turn-Off Delay Time :

59 ns

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-30V

Resistance :

20mOhm

Mount :

Surface Mount

Width :

3.9878mm

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Turn On Delay Time :

18 ns

Power Dissipation :

2.5W

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Additional Feature :

ULTRA LOW RESISTANCE

Height :

1.75mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Threshold Voltage :

-2.04V

Power Dissipation-Max :

2.5W Ta

Recovery Time :

85 ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Termination :

SMD/SMT

Rise Time :

49ns

Operating Mode :

ENHANCEMENT MODE

Length :

4.9784mm

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

-20 V

Pulsed Drain Current-Max (IDM) :

45A

Series :

HEXFET®

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Contact Plating :

Tin

Voltage - Rated DC :

-30V

Continuous Drain Current (ID) :

-10A

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Number of Terminations :

8

Current Rating :

-10A

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99