IRF7416TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Drain to Source Voltage (Vdss) :

-30 V

Polarity/Channel Type :

P-Channel

Rds On (Max) @ Id, Vgs :

20mOhm @ 5.6A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

Infineon Technologies AG

Power Dissipation-Max (Abs) :

2.5 W

Power Dissipation (Max) :

2.5W (Ta)

Operating Temperature :

-55°C ~ 150°C (TJ)

Product Status :

Obsolete

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

10 A

RoHS :

Compliant

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

92 nC @ 10 V

Subcategory :

Other Transistors

Package Quantity :

4000

Series :

HEXFET®

Max Junction Temperature (Tj) :

150 °C

Vgs(th) (Max) @ Id :

2.04V @ 250µA

Configuration :

Single

Package :

Tape and Reel (TR)

Continuous Drain Current (ID) :

10 A

Max Operating Temperature :

150 °C

Surface Mount :

yes

Contact Plating :

Tin

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Technology :

MOSFET (Metal Oxide)

Supplier Device Package :

8-SOIC

Input Capacitance (Ciss) (Max) @ Vds :

1700 pF @ 25 V

Min Operating Temperature :

-55 °C

Number of Pins :

8

On-State Resistance :

20 mΩ

Lifecycle Status :

Production (Last Updated: 2 years ago)

Rise Time :

49 ns

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)