IRF7416QTRPBF
- Mfr.Part #
- IRF7416QTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 10A 8-SOIC
- Stock
- 13,958
- In Stock :
- 13,958
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 18 ns
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Packaging :
- Cut Tape (CT)
- Max Operating Temperature :
- 150°C
- Length :
- 4.9784mm
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Published :
- 2007
- Fall Time (Typ) :
- 60 ns
- Min Operating Temperature :
- -55°C
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Series :
- HEXFET®
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 5.6A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- -10A
- Nominal Vgs :
- -1 V
- Turn-Off Delay Time :
- 59 ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- FET Type :
- P-Channel
- Mount :
- Surface Mount
- Height :
- 1.4986mm
- Width :
- 3.9878mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Power Dissipation :
- 2.5W
- Drain to Source Voltage (Vdss) :
- 30V
- Max Power Dissipation :
- 2.5W
- Number of Elements :
- 1
- Rise Time :
- 49ns
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Datasheets
- IRF7416QTRPBF

P-Channel Cut Tape (CT) 20m Ω @ 5.6A, 10V 1700pF @ 25V 92nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7416QTRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1700pF @ 25V.This device conducts a continuous drain current (ID) of -10A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 59 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.
IRF7416QTRPBF Features
a continuous drain current (ID) of -10A
the turn-off delay time is 59 ns
a 30V drain to source voltage (Vdss)
IRF7416QTRPBF Applications
There are a lot of Infineon Technologies
IRF7416QTRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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