IRF7416PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.02Ohm

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

370 mJ

Power Dissipation-Max :

2.5W Ta

Number of Elements :

1

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

20m Ω @ 5.6A, 10V

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

30V

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

MS-012AA

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Drain Current-Max (Abs) (ID) :

10A

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

45A

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

ECCN Code :

EAR99