IRF7416GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.4986mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Power Dissipation-Max :

2.5W Ta

Input Capacitance :

1.7nF

Turn-Off Delay Time :

59 ns

Series :

HEXFET®

Rise Time :

49ns

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

10A

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

-30V

Length :

4.9784mm

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

20mOhm @ 5.6A, 10V

Drain to Source Resistance :

20mOhm

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

60 ns

RoHS Status :

RoHS Compliant

Rds On Max :

20 mΩ

Width :

3.9878mm

Drain to Source Voltage (Vdss) :

30V

Published :

2011

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Turn On Delay Time :

18 ns

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Element Configuration :

Single

Supplier Device Package :

8-SO

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V