IRF7413ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

32 mJ

Mount :

Surface Mount

Power Dissipation :

2.5W

Series :

HEXFET®

FET Type :

N-Channel

REACH SVHC :

No SVHC

Rise Time :

6.3ns

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

11 ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Resistance :

10MOhm

Lead Free :

Contains Lead, Lead Free

Threshold Voltage :

1.8V

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Height :

1.4986mm

Length :

4.9784mm

Turn On Delay Time :

8.7 ns

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Width :

3.9878mm

Dual Supply Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Current Rating :

13A

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Transistor Application :

SWITCHING

Nominal Vgs :

1.8 V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

13A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Rds On (Max) @ Id, Vgs :

10m Ω @ 13A, 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Pins :

8

Fall Time (Typ) :

3.8 ns

Terminal Form :

Gull wing

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Voltage - Rated DC :

30V

Row Spacing :

6.3 mm

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2005

Recovery Time :

36 ns