IRF7413ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Power Dissipation-Max :

2.5W Ta

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

32 mJ

DS Breakdown Voltage-Min :

30V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.01Ohm

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

10m Ω @ 13A, 10V

Packaging :

Tube

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

100A

Number of Terminations :

8

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

13A

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JEDEC-95 Code :

MS-012AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G8

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Vgs (Max) :

±20V