IRF7413Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

13A

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Packaging :

Tube

Terminal Finish :

TIN LEAD

Drain-source On Resistance-Max :

0.01Ohm

JESD-609 Code :

e0

HTS Code :

8541.29.00.95

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

10m Ω @ 13A, 10V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

MS-012AA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.5W Ta

Peak Reflow Temperature (Cel) :

245

Terminal Form :

Gull wing

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

100A

Terminal Position :

Dual

Number of Terminations :

8

Number of Elements :

1

Avalanche Energy Rating (Eas) :

32 mJ

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PDSO-G8

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V