IRF7413TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

11m Ω @ 7.3A, 10V

Number of Terminations :

8

Fall Time (Typ) :

46 ns

Recovery Time :

110 ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

3 V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Transistor Application :

SWITCHING

Resistance :

11mOhm

ECCN Code :

EAR99

Radiation Hardening :

No

Row Spacing :

6.3 mm

Terminal Form :

Gull wing

Current Rating :

13A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Continuous Drain Current (ID) :

13A

Additional Feature :

ULTRA LOW RESISTANCE

Height :

1.75mm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Published :

2007

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Number of Channels :

1

Max Junction Temperature (Tj) :

150°C

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

30V

Power Dissipation-Max :

2.5W Ta

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

FET Type :

N-Channel

Width :

3.9878mm

Avalanche Energy Rating (Eas) :

260 mJ

Dual Supply Voltage :

30V

Vgs (Max) :

±20V

Lead Free :

Contains Lead, Lead Free

Turn On Delay Time :

8.6 ns

Threshold Voltage :

3V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

52 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

4.9784mm

REACH SVHC :

No SVHC

Rise Time :

50ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V