IRF7413TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Height :

1.75mm

Number of Terminations :

8

Additional Feature :

ULTRA LOW RESISTANCE

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

11m Ω @ 7.3A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

3V

Turn-Off Delay Time :

52 ns

Rise Time :

50ns

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Number of Elements :

1

Fall Time (Typ) :

46 ns

Voltage - Rated DC :

30V

Number of Channels :

1

JESD-609 Code :

e3

Continuous Drain Current (ID) :

13A

Dual Supply Voltage :

30V

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

3 V

REACH SVHC :

No SVHC

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Current Rating :

13A

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Row Spacing :

6.3 mm

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

ECCN Code :

EAR99

Lead Free :

Contains Lead, Lead Free

Turn On Delay Time :

8.6 ns

Length :

4.9784mm

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Published :

2007

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Power Dissipation :

2.5W

Vgs (Max) :

±20V

Resistance :

11mOhm

Width :

3.9878mm

Avalanche Energy Rating (Eas) :

260 mJ

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Series :

HEXFET®

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Recovery Time :

110 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Max Junction Temperature (Tj) :

150°C