IRF7413QTRPBF
- Mfr.Part #
- IRF7413QTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13A 8-SOIC
- Stock
- 21,659
- In Stock :
- 21,659
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 11mOhm @ 7.3A, 10V
- Width :
- 3.9878mm
- Rds On Max :
- 11 mΩ
- Input Capacitance :
- 1.8nF
- Continuous Drain Current (ID) :
- 13A
- Drain to Source Resistance :
- 18mOhm
- Power Dissipation :
- 2.5W
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Published :
- 2014
- Packaging :
- Cut Tape (CT)
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Length :
- 4.9784mm
- Series :
- HEXFET®
- Turn On Delay Time :
- 8.6 ns
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Turn-Off Delay Time :
- 52 ns
- Supplier Device Package :
- 8-SO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.4986mm
- Fall Time (Typ) :
- 46 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 79nC @ 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Max Power Dissipation :
- 2.5W
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 50ns
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Datasheets
- IRF7413QTRPBF

N-Channel Cut Tape (CT) 11mOhm @ 7.3A, 10V 1800pF @ 25V 79nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7413QTRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 52 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 18mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8.6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.
IRF7413QTRPBF Features
a continuous drain current (ID) of 13A
the turn-off delay time is 52 ns
single MOSFETs transistor is 18mOhm
a 30V drain to source voltage (Vdss)
IRF7413QTRPBF Applications
There are a lot of Infineon Technologies
IRF7413QTRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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