IRF7410TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

271 ns

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Voltage - Rated DC :

-12V

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Resistance :

7mOhm

Dual Supply Voltage :

-12V

Input Capacitance (Ciss) (Max) @ Vds :

8676pF @ 10V

Element Configuration :

Single

Number of Elements :

1

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Number of Terminations :

8

Max Junction Temperature (Tj) :

150°C

Contact Plating :

Tin

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

65A

Published :

2006

FET Type :

P-Channel

Rise Time :

12ns

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Width :

3.9878mm

Drain to Source Breakdown Voltage :

-12V

RoHS Status :

ROHS3 Compliant

Current Rating :

-16A

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Nominal Vgs :

-900 mV

Threshold Voltage :

-400mV

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

13 ns

Recovery Time :

145 ns

Row Spacing :

6.3 mm

Time@Peak Reflow Temperature-Max (s) :

30

Termination :

SMD/SMT

JESD-609 Code :

e3

Number of Pins :

8

Vgs(th) (Max) @ Id :

900mV @ 250μA

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 4.5V

Length :

4.9784mm

Rds On (Max) @ Id, Vgs :

7m Ω @ 16A, 4.5V

Height :

1.75mm

Continuous Drain Current (ID) :

-16A

Mounting Type :

Surface Mount

Fall Time (Typ) :

200 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±8V

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

12V