IRF7410TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminals :

8

Series :

HEXFET®

Mounting Type :

Surface Mount

Subcategory :

Other Transistors

Packaging :

Tape and Reel

Package Shape :

RECTANGULAR

Polarity/Channel Type :

P-Channel

Vgs (Max) :

±8V

Drain Current-Max (Abs) (ID) :

16 A

RoHS :

Non-Compliant

Input Capacitance (Ciss) (Max) @ Vds :

8676 pF @ 10 V

Lifecycle Status :

Production (Last Updated: 2 years ago)

Power Dissipation-Max (Abs) :

2.5 W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package :

8-SOIC

Package :

Tape and Reel (TR)

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

900mV @ 250μA

Technology :

MOSFET (Metal Oxide)

On-State Resistance :

7 mΩ

Power Dissipation :

2.5

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Manufacturer :

Infineon Technologies AG

Product Status :

Obsolete

Drain-source On Resistance-Max :

0.007 Ω

FET Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

65 A

Continuous Drain Current Id :

16

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

12 V

Rds On (Max) @ Id, Vgs :

7mOhm @ 16A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

91 nC @ 4.5 V

Gate to Source Voltage (Vgs) :

8 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

JESD-609 Code :

e3

Package Quantity :

4000

Terminal Position :

Dual

Number of Elements :

1

Max Junction Temperature (Tj) :

150 °C

Surface Mount :

yes

FET Feature :

-

JEDEC-95 Code :

MS-012AA

Current - Continuous Drain (Id) @ 25°C :

16A (Ta)

Terminal Form :

Gull wing

Power Dissipation (Max) :

2.5W (Ta)

Drain to Source Voltage (Vdss) :

-12 V