IRF7410PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Drain Current-Max (Abs) (ID) :

16A

Vgs(th) (Max) @ Id :

900mV @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 4.5V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

7m Ω @ 16A, 4.5V

Terminal Form :

Gull wing

Surface Mount :

yes

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.007Ohm

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

8676pF @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Additional Feature :

ULTRA LOW RESISTANCE

JESD-30 Code :

R-PDSO-G8

DS Breakdown Voltage-Min :

12V

FET Type :

P-Channel

JEDEC-95 Code :

MS-012AA

Qualification Status :

Not Qualified

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

8

Transistor Application :

SWITCHING

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta

Drain to Source Voltage (Vdss) :

12V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Vgs (Max) :

±8V

Pulsed Drain Current-Max (IDM) :

65A