IRF7410GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Vgs (Max) :

±8V

Drain-source On Resistance-Max :

0.007Ohm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

7m Ω @ 16A, 4.5V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Length :

4.9784mm

Radiation Hardening :

No

Turn-Off Delay Time :

271 ns

Drain to Source Voltage (Vdss) :

12V

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Pulsed Drain Current-Max (IDM) :

65A

RoHS Status :

ROHS3 Compliant

Additional Feature :

ULTRA LOW RESISTANCE

Mounting Type :

Surface Mount

Turn On Delay Time :

13 ns

Power Dissipation :

2.5W

Number of Terminations :

8

Series :

HEXFET®

Mount :

Surface Mount

Continuous Drain Current (ID) :

16A

Number of Elements :

1

Terminal Position :

Dual

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Height :

1.4986mm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 4.5V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

900mV @ 250μA

Power Dissipation-Max :

2.5W Ta

Width :

3.9878mm

Fall Time (Typ) :

300 ns

Drain to Source Breakdown Voltage :

-12V

Gate to Source Voltage (Vgs) :

8V

Rise Time :

18ns

Factory Lead Time :

18 Weeks

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

8676pF @ 10V