IRF740STRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

550m Ω @ 6A, 10V

Drain-source On Resistance-Max :

0.55Ohm

Transistor Application :

SWITCHING

Weight :

1.437803g

Factory Lead Time :

11 Weeks

Power Dissipation :

3.1W

Length :

10.67mm

Mount :

Surface Mount

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Fall Time (Typ) :

24 ns

Vgs (Max) :

±20V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Pin Count :

3

Turn On Delay Time :

14 ns

Avalanche Energy Rating (Eas) :

520 mJ

Pbfree Code :

yes

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

3.1W Ta 125W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Continuous Drain Current (ID) :

10A

Drain to Source Voltage (Vdss) :

400V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Turn-Off Delay Time :

50 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

DS Breakdown Voltage-Min :

400V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Published :

2012

Rise Time :

27ns

Time@Peak Reflow Temperature-Max (s) :

30

Width :

9.65mm

Height :

4.83mm

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

40A

Operating Mode :

ENHANCEMENT MODE