IRF740LCPBF
- Mfr.Part #
- IRF740LCPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A TO220AB
- Stock
- 3,445
- In Stock :
- 3,445
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 1.1nF
- Height :
- 9.01mm
- Turn On Delay Time :
- 11 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Mounting Type :
- Through Hole
- REACH SVHC :
- Unknown
- Number of Channels :
- 1
- Published :
- 2011
- Package / Case :
- TO-220-3
- Current Rating :
- 10A
- Factory Lead Time :
- 8 Weeks
- Rds On (Max) @ Id, Vgs :
- 550mOhm @ 6A, 10V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.41mm
- Supplier Device Package :
- TO-220AB
- Drain to Source Voltage (Vdss) :
- 400V
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Through Hole
- Power Dissipation :
- 125W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.7mm
- Rds On Max :
- 550 mΩ
- Weight :
- 6.000006g
- Threshold Voltage :
- 4V
- Drain to Source Breakdown Voltage :
- 400V
- Voltage - Rated DC :
- 400V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±30V
- Rise Time :
- 31ns
- Power Dissipation-Max :
- 125W Tc
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 20 ns
- Continuous Drain Current (ID) :
- 10A
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Resistance :
- 550mOhm
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 25 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Recovery Time :
- 570 ns
- Drain to Source Resistance :
- 550mOhm
- Datasheets
- IRF740LCPBF
N-Channel Tube 550mOhm @ 6A, 10V ±30V 1100pF @ 25V 39nC @ 10V 400V TO-220-3
IRF740LCPBF Overview
A device's maximal input capacitance is 1100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 400V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 550mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF740LCPBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF740LCPBF Applications
There are a lot of Vishay Siliconix
IRF740LCPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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