IRF740BPBF
- Mfr.Part #
- IRF740BPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A TO220AB
- Stock
- 4,081
- In Stock :
- 4,081
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 5V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Turn-Off Delay Time :
- 50 ns
- Package / Case :
- TO-220-3
- Weight :
- 6.000006g
- Fall Time (Typ) :
- 24 ns
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 14 ns
- Rise Time :
- 27ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 10A
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 5A, 10V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Published :
- 2016
- Input Capacitance (Ciss) (Max) @ Vds :
- 526pF @ 100V
- Drain to Source Voltage (Vdss) :
- 400V
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Power Dissipation-Max :
- 147W Tc
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain-source On Resistance-Max :
- 0.6Ohm
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 8 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1
- DS Breakdown Voltage-Min :
- 400V
- Datasheets
- IRF740BPBF
N-Channel Tube 600m Ω @ 5A, 10V ±30V 526pF @ 100V 30nC @ 10V 400V TO-220-3
IRF740BPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 526pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 400V, it should remain above the 400V level.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF740BPBF Features
a continuous drain current (ID) of 10A
the turn-off delay time is 50 ns
a threshold voltage of 5V
a 400V drain to source voltage (Vdss)
IRF740BPBF Applications
There are a lot of Vishay Siliconix
IRF740BPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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