IRF740B
- Mfr.Part #
- IRF740B
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A TO220-3
- Stock
- 42,359
- In Stock :
- 42,359
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.8pF @ 25V
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Package / Case :
- TO-220-3
- Drain-source On Resistance-Max :
- 0.54Ohm
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 540m Ω @ 5A, 10V
- DS Breakdown Voltage-Min :
- 400V
- Number of Terminations :
- 3
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 134W Tc
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 10A
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 40A
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Voltage (Vdss) :
- 400V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRF740B

N-Channel Tube 540m Ω @ 5A, 10V ±30V 1.8pF @ 25V 53nC @ 10V 400V TO-220-3
IRF740B Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The maximum input capacitance of this device is 1.8pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 10A.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 400V.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF740B Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 40A.
a 400V drain to source voltage (Vdss)
IRF740B Applications
There are a lot of Rochester Electronics, LLC
IRF740B applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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