IRF740B

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Mfr.Part #
IRF740B
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 10A TO220-3
Stock
42,359
In Stock :
42,359

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
COMMERCIAL
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds :
1.8pF @ 25V
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Package / Case :
TO-220-3
Drain-source On Resistance-Max :
0.54Ohm
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
540m Ω @ 5A, 10V
DS Breakdown Voltage-Min :
400V
Number of Terminations :
3
Terminal Finish :
MATTE TIN
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
134W Tc
Avalanche Energy Rating (Eas) :
450 mJ
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
10A
Pin Count :
3
Transistor Element Material :
SILICON
Reach Compliance Code :
Unknown
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
40A
JEDEC-95 Code :
TO-220AB
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSFM-T3
Drain to Source Voltage (Vdss) :
400V
RoHS Status :
ROHS3 Compliant
Datasheets
IRF740B
Introducing Transistors - FETs, MOSFETs - Single onsemi IRF740B from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IRF740B pinout, IRF740B datasheet PDF, IRF740B amp .Beyond Transistors - FETs, MOSFETs - Single onsemi IRF740B ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi IRF740B


N-Channel Tube 540m Ω @ 5A, 10V ±30V 1.8pF @ 25V 53nC @ 10V 400V TO-220-3

IRF740B Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The maximum input capacitance of this device is 1.8pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 10A.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 400V.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF740B Features


the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 40A.
a 400V drain to source voltage (Vdss)


IRF740B Applications


There are a lot of Rochester Electronics, LLC
IRF740B applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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