IRF740B
- Mfr.Part #
- IRF740B
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A TO220-3
- Stock
- 42,359
- In Stock :
- 42,359
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.8pF @ 25V
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Pulsed Drain Current-Max (IDM) :
- 40A
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.54Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Qualification Status :
- COMMERCIAL
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 540m Ω @ 5A, 10V
- Drain to Source Voltage (Vdss) :
- 400V
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 134W Tc
- JEDEC-95 Code :
- TO-220AB
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 400V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 10A
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Datasheets
- IRF740B

N-Channel Tube 540m Ω @ 5A, 10V ±30V 1.8pF @ 25V 53nC @ 10V 400V TO-220-3
IRF740B Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The maximum input capacitance of this device is 1.8pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 10A.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 400V.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF740B Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 40A.
a 400V drain to source voltage (Vdss)
IRF740B Applications
There are a lot of Rochester Electronics, LLC
IRF740B applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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