IRF740B

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Mfr.Part #
IRF740B
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 10A TO220-3
Stock
42,359
In Stock :
42,359

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1.8pF @ 25V
Number of Terminations :
3
Terminal Position :
Single
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Pulsed Drain Current-Max (IDM) :
40A
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
Pbfree Code :
yes
Reach Compliance Code :
Unknown
Surface Mount :
No
Drain-source On Resistance-Max :
0.54Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 250µA
Qualification Status :
COMMERCIAL
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
540m Ω @ 5A, 10V
Drain to Source Voltage (Vdss) :
400V
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
134W Tc
JEDEC-95 Code :
TO-220AB
Terminal Finish :
MATTE TIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-220-3
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
DS Breakdown Voltage-Min :
400V
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
10A
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
450 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Datasheets
IRF740B
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor IRF740B from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IRF740B pinout, IRF740B datasheet PDF, IRF740B amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor IRF740B ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor IRF740B


N-Channel Tube 540m Ω @ 5A, 10V ±30V 1.8pF @ 25V 53nC @ 10V 400V TO-220-3

IRF740B Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The maximum input capacitance of this device is 1.8pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 10A.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 400V.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF740B Features


the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 40A.
a 400V drain to source voltage (Vdss)


IRF740B Applications


There are a lot of Rochester Electronics, LLC
IRF740B applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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