IRF740AS
- Mfr.Part #
- IRF740AS
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A D2PAK
- Stock
- 12,941
- In Stock :
- 12,941
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 400V
- Max Operating Temperature :
- 150°C
- Weight :
- 1.437803g
- Rise Time :
- 35ns
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 400V
- Length :
- 10.67mm
- Gate to Source Voltage (Vgs) :
- 30V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 24 ns
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Published :
- 2014
- Input Capacitance :
- 1.03nF
- Number of Channels :
- 1
- Current Rating :
- 10A
- Power Dissipation :
- 3.1W
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Turn On Delay Time :
- 10 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 550mOhm @ 6A, 10V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Drain to Source Resistance :
- 550mOhm
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Width :
- 9.65mm
- Rds On Max :
- 550 mΩ
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 400V
- Supplier Device Package :
- D2PAK
- Height :
- 4.83mm
- Continuous Drain Current (ID) :
- 10A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 22 ns
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRF740AS
N-Channel Tube 550mOhm @ 6A, 10V ±30V 1030pF @ 25V 36nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF740AS Overview
A device's maximum input capacitance is 1030pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 550mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF740AS Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740AS Applications
There are a lot of Vishay Siliconix
IRF740AS applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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