IRF740APBF
- Mfr.Part #
- IRF740APBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A TO220AB
- Stock
- 15,627
- In Stock :
- 15,627
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 9.01mm
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 10 ns
- Element Configuration :
- Single
- Nominal Vgs :
- 4 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Turn-Off Delay Time :
- 24 ns
- Packaging :
- Tube
- Rise Time :
- 35ns
- Number of Pins :
- 3
- Number of Elements :
- 1
- Drain to Source Resistance :
- 550mOhm
- Threshold Voltage :
- 4V
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 550mOhm @ 6A, 10V
- Fall Time (Typ) :
- 22 ns
- Input Capacitance :
- 1.03nF
- Lead Free :
- Lead Free
- Current Rating :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Rds On Max :
- 550 mΩ
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Max Operating Temperature :
- 150°C
- Weight :
- 6.000006g
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Vgs (Max) :
- ±30V
- Resistance :
- 550mOhm
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Length :
- 10.41mm
- Power Dissipation :
- 125W
- Supplier Device Package :
- TO-220AB
- Voltage - Rated DC :
- 400V
- Width :
- 4.7mm
- Drain to Source Voltage (Vdss) :
- 400V
- Power Dissipation-Max :
- 125W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Published :
- 2016
- Drain to Source Breakdown Voltage :
- 400V
- Datasheets
- IRF740APBF
N-Channel Tube 550mOhm @ 6A, 10V ±30V 1030pF @ 25V 36nC @ 10V 400V TO-220-3
IRF740APBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1030pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24 ns.This device has a drain-to-source resistance of 550mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF740APBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF740APBF Applications
There are a lot of Vishay Siliconix
IRF740APBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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