IRF740ALPBF
- Mfr.Part #
- IRF740ALPBF
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A I2PAK
- Stock
- 8,490
- In Stock :
- 8,490
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- Rise Time :
- 35ns
- Supplier Device Package :
- I2PAK
- Mount :
- Through Hole
- Rds On Max :
- 550 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Resistance :
- 550mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 22 ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 550mOhm @ 6A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- REACH SVHC :
- Unknown
- Power Dissipation :
- 3.1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Weight :
- 2.387001g
- Packaging :
- Tube
- Turn-Off Delay Time :
- 24 ns
- Turn On Delay Time :
- 10 ns
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 10A
- Number of Elements :
- 1
- Published :
- 2009
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Input Capacitance :
- 1.03nF
- Max Operating Temperature :
- 150°C
- Height :
- 9.65mm
- Width :
- 4.7mm
- Threshold Voltage :
- 4V
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Drain to Source Voltage (Vdss) :
- 400V
- Drain to Source Breakdown Voltage :
- 400V
- Length :
- 10.41mm
- Resistance :
- 550mOhm
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheets
- IRF740ALPBF
N-Channel Tube 550mOhm @ 6A, 10V ±30V 1030pF @ 25V 36nC @ 10V 400V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF740ALPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1030pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.In this device, the drain-source breakdown voltage is 400V and VGS=400V, so the drain-source breakdown voltage is 400V in this case.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 550mOhm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.To operate this transistor, you will need a 400V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF740ALPBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF740ALPBF Applications
There are a lot of Vishay Siliconix
IRF740ALPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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