IRF740AL
- Mfr.Part #
- IRF740AL
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A I2PAK
- Stock
- 38,280
- In Stock :
- 38,280
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 24 ns
- Height :
- 9.65mm
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Length :
- 10.41mm
- Drain to Source Resistance :
- 550mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2016
- Fall Time (Typ) :
- 22 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 400V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Number of Channels :
- 1
- Rise Time :
- 35ns
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package :
- I2PAK
- Max Operating Temperature :
- 150°C
- Weight :
- 2.387001g
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 10 ns
- Packaging :
- Tube
- Input Capacitance :
- 1.03nF
- FET Type :
- N-Channel
- Width :
- 4.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 10A
- Rds On Max :
- 550 mΩ
- Rds On (Max) @ Id, Vgs :
- 550mOhm @ 6A, 10V
- Min Operating Temperature :
- -55°C
- Datasheets
- IRF740AL
N-Channel Tube 550mOhm @ 6A, 10V ±30V 1030pF @ 25V 36nC @ 10V 400V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF740AL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1030pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 24 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 550mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF740AL Features
a continuous drain current (ID) of 10A
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740AL Applications
There are a lot of Vishay Siliconix
IRF740AL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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