IRF740A
- Mfr.Part #
- IRF740A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A TO220AB
- Stock
- 8,431
- In Stock :
- 8,431
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.55Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.03pF @ 25V
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 10A
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 40A
- Qualification Status :
- COMMERCIAL
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 125W Tc
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 400V
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Terminal Finish :
- TIN LEAD
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- No
- Avalanche Energy Rating (Eas) :
- 630 mJ
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- Non-RoHS Compliant
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 6A, 10V
- Case Connection :
- DRAIN
- JESD-609 Code :
- e0
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IRF740A

N-Channel Tube 550m Ω @ 6A, 10V ±30V 1.03pF @ 25V 36nC @ 10V 400V TO-220-3
IRF740A Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 630 mJ.A device's maximal input capacitance is 1.03pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 10A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 400V.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF740A Features
the avalanche energy rating (Eas) is 630 mJ
based on its rated peak drain current 40A.
a 400V drain to source voltage (Vdss)
IRF740A Applications
There are a lot of Rochester Electronics, LLC
IRF740A applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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