IRF7406TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Length :

4.9784mm

Mounting Type :

Surface Mount

Radiation Hardening :

No

Additional Feature :

ULTRA LOW RESISTANCE

Width :

3.9878mm

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Number of Pins :

8

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Threshold Voltage :

-1V

Resistance :

45mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Packaging :

Tape and Reel (TR)

Recovery Time :

63 ns

Time@Peak Reflow Temperature-Max (s) :

30

Number of Channels :

1

Rise Time :

33ns

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

-1 V

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

45m Ω @ 2.8A, 10V

Height :

1.75mm

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Voltage - Rated DC :

-30V

Turn-Off Delay Time :

45 ns

Terminal Form :

Gull wing

Dual Supply Voltage :

-30V

Element Configuration :

Single

REACH SVHC :

No SVHC

Published :

2004

Number of Elements :

1

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-5.8A

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

23A

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Row Spacing :

6.3 mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

47 ns

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Continuous Drain Current (ID) :

-5.8A

Turn On Delay Time :

16 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-30V

Operating Mode :

ENHANCEMENT MODE