IRF7406PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

6.7A

Published :

2003

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

45m Ω @ 2.8A, 10V

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Number of Terminations :

8

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

JEDEC-95 Code :

MS-012AA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

23A

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Factory Lead Time :

39 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.045Ohm

Number of Elements :

1

Terminal Form :

Gull wing

Packaging :

Tube

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)