IRF7404TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

700mV @ 250μA

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-700 mV

FET Type :

P-Channel

Width :

3.9878mm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

40m Ω @ 3.2A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Published :

2004

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-700mV

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±12V

Continuous Drain Current (ID) :

-6.7A

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Length :

4.9784mm

Turn-Off Delay Time :

100 ns

Mount :

Surface Mount

Height :

1.4986mm

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Row Spacing :

6.3 mm

Transistor Element Material :

SILICON

Current Rating :

-6.7A

ECCN Code :

EAR99

Contact Plating :

Tin

Resistance :

40mOhm

Turn On Delay Time :

14 ns

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Series :

HEXFET®

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Drain Current-Max (Abs) (ID) :

5.3A

Dual Supply Voltage :

-20V

Rise Time :

32ns

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Fall Time (Typ) :

65 ns

Recovery Time :

100 ns

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Number of Terminations :

8

Voltage - Rated DC :

-20V