IRF7404TRPBF
- Mfr.Part #
- IRF7404TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 6.7A 8SO
- Stock
- 336,553
- In Stock :
- 336,553
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Row Spacing :
- 6.3 mm
- Length :
- 4.9784mm
- Dual Supply Voltage :
- -20V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 5.3A
- Series :
- HEXFET®
- Turn-Off Delay Time :
- 100 ns
- Published :
- 2004
- Current Rating :
- -6.7A
- Turn On Delay Time :
- 14 ns
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- -20V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Nominal Vgs :
- -700 mV
- Width :
- 3.9878mm
- Height :
- 1.4986mm
- Vgs (Max) :
- ±12V
- Number of Elements :
- 1
- Number of Terminations :
- 8
- Factory Lead Time :
- 12 Weeks
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Recovery Time :
- 100 ns
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 12V
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Voltage (Vdss) :
- 20V
- Power Dissipation-Max :
- 2.5W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 4.5V
- Continuous Drain Current (ID) :
- -6.7A
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -20V
- Threshold Voltage :
- -700mV
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A Ta
- Rise Time :
- 32ns
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- REACH SVHC :
- No SVHC
- Resistance :
- 40mOhm
- JESD-609 Code :
- e3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 3.2A, 4.5V
- Fall Time (Typ) :
- 65 ns
- Power Dissipation :
- 2.5W
- Datasheets
- IRF7404TRPBF

P-Channel Tape & Reel (TR) 40m Ω @ 3.2A, 4.5V ±12V 1500pF @ 15V 50nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7404TRPBF Description
IRF7404TRPBF is a -20V Single P-Channel HEXFET Power MOSFET. Fith Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with a highly efficient device for use in a wide variety of applications.
IRF7404TRPBF Features
-
RoHS Compliant
-
Low RDS(on)
-
Industry-leading quality
-
Dynamic dv/dt Rating
-
Fast Switching
-
Fully Avalanche Rated
-
175°C Operating Temperature
-
P-Channel MOSFET
IRF7404TRPBF Applications
-
DC motor drive
-
High-efficiency synchronous rectification in SMPS
-
Uninterruptible power supply
-
High-speed power switching
-
Hard switched and high-frequency circuits
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