IRF7403PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

MS-012AA

Power Dissipation-Max :

2.5W Ta

Additional Feature :

LOGIC LEVEL COMPATIBLE

Surface Mount :

yes

Number of Elements :

1

Number of Terminations :

8

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-30 Code :

R-PDSO-G8

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

1997

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.022Ohm

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

34A

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

8.5A

Series :

HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

22m Ω @ 4A, 10V

Peak Reflow Temperature (Cel) :

260