IRF7402PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

Gate to Source Voltage (Vgs) :

12V

Number of Elements :

1

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Current Rating :

6.8A

Fall Time (Typ) :

32 ns

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

35 mΩ

Width :

3.9878mm

Drain to Source Resistance :

35mOhm

Voltage - Rated DC :

20V

Nominal Vgs :

700 mV

Length :

4.9784mm

Resistance :

35mOhm

Packaging :

Tube

Row Spacing :

6.3 mm

Height :

1.4986mm

Series :

HEXFET®

Input Capacitance :

650pF

Supplier Device Package :

8-SO

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

FET Type :

N-Channel

Dual Supply Voltage :

20V

Vgs (Max) :

±12V

Number of Pins :

8

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

700mV @ 250μA

Power Dissipation-Max :

2.5W Ta

Threshold Voltage :

700mV

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C

Turn On Delay Time :

5.1 ns

Rise Time :

47ns

Published :

2004

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

35mOhm @ 4.1A, 4.5V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Max Operating Temperature :

150°C

Radiation Hardening :

No

Turn-Off Delay Time :

24 ns

Continuous Drain Current (ID) :

6.8A