IRF7401TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

4.9784mm

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.1A, 4.5V

Vgs(th) (Max) @ Id :

700mV @ 250μA

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

700 mV

Resistance :

22mOhm

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

35A

Power Dissipation-Max :

2.5W Ta

Turn-Off Delay Time :

65 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

20V

ECCN Code :

EAR99

Additional Feature :

ULTRA LOW RESISTANCE

Threshold Voltage :

700mV

Published :

2004

Turn On Delay Time :

13 ns

Element Configuration :

Single

Height :

1.4986mm

Terminal Form :

Gull wing

Current Rating :

8.7A

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Lead Free :

Contains Lead, Lead Free

Radiation Hardening :

No

Power Dissipation :

2.5W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9878mm

Terminal Position :

Dual

Continuous Drain Current (ID) :

8.7A

Number of Pins :

8

Row Spacing :

6.3 mm

Mounting Type :

Surface Mount

Voltage - Rated DC :

20V

Drain to Source Breakdown Voltage :

20V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

8.7A Ta

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Mount :

Surface Mount

Rise Time :

72ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 4.5V

Fall Time (Typ) :

92 ns

FET Type :

N-Channel

Number of Terminations :

8

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±12V