IRF7401PBF
- Mfr.Part #
- IRF7401PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 8.7A 8SO
- Stock
- 579,656
- In Stock :
- 579,656
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 8.7A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.5W Ta
- Series :
- HEXFET®
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 20V
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 4.1A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 15V
- Published :
- 2001
- FET Type :
- N-Channel
- Datasheets
- IRF7401PBF

N-Channel Tube 22m Ω @ 4.1A, 4.5V ±12V 1600pF @ 15V 48nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7401PBF Description
The most latest manufacturing techniques are used to produce this HEXFET? Power MOSFET, which has an exceptionally low on-resistance per silicon area. Other features of this design include higher repeated avalanche rating, rapid switching, and junction working temperature of 175°C. Together, these features provide a very reliable and efficient device that can be applied to a variety of situations.
IRF540ZPBF Features
-
Advanced Process Technology
-
Ultra Low On-Resistance
-
175°C Operating Temperature
-
Fast Switching
-
Repetitive Avalanche Allowed up to Tjmax
IRF540ZPBF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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