IRF7353D1TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage - Rated DC :

30V

FET Feature :

Schottky Diode (Isolated)

Current Rating :

6.5A

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

8.1 ns

Rise Time :

8.9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Power Dissipation :

2W

Rds On Max :

32 mΩ

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Width :

3.9878mm

Drain to Source Breakdown Voltage :

30V

Published :

2004

Min Operating Temperature :

-55°C

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Supplier Device Package :

8-SO

Input Capacitance :

650pF

Continuous Drain Current (ID) :

6.5A

Length :

4.9784mm

Mount :

Surface Mount

Turn-Off Delay Time :

26 ns

Vgs (Max) :

±20V

Max Operating Temperature :

150°C

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Drain to Source Resistance :

46mOhm

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

32mOhm @ 5.8A, 10V

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

FETKY™

Mounting Type :

Surface Mount

Power Dissipation-Max :

2W Ta

Radiation Hardening :

No

FET Type :

N-Channel

Height :

1.4986mm

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

17 ns

Number of Pins :

8