IRF734PBF

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Mfr.Part #
IRF734PBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 450V 4.9A TO220AB
Stock
39,195
In Stock :
39,195

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
21 ns
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
680pF @ 25V
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
4.9A
Lead Free :
Lead Free
Power Dissipation-Max :
74W Tc
Drain to Source Breakdown Voltage :
450V
Current Rating :
4.9A
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
4.9A Tc
Published :
2004
Rise Time :
22ns
Rds On Max :
1.2 Ω
Drain to Source Voltage (Vdss) :
450V
Drain to Source Resistance :
1.2Ohm
Packaging :
Tube
Max Operating Temperature :
150°C
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Voltage - Rated DC :
450V
Package / Case :
TO-220-3
Min Operating Temperature :
-55°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
TO-220AB
FET Type :
N-Channel
Mount :
Through Hole
Turn-Off Delay Time :
40 ns
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
1.2Ohm @ 2.9A, 10V
Input Capacitance :
680pF
Vgs (Max) :
±20V
Datasheets
IRF734PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF734PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IRF734PBF pinout, IRF734PBF datasheet PDF, IRF734PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF734PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF734PBF


N-Channel Tube 1.2Ohm @ 2.9A, 10V ±20V 680pF @ 25V 45nC @ 10V 450V TO-220-3

IRF734PBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 680pF @ 25V.This device conducts a continuous drain current (ID) of 4.9A, which is the maximum continuous current transistor can conduct.Using VGS=450V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 450V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.2Ohm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 450V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF734PBF Features


a continuous drain current (ID) of 4.9A
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 1.2Ohm
a 450V drain to source voltage (Vdss)


IRF734PBF Applications


There are a lot of Vishay Siliconix
IRF734PBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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