IRF7342D2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.4986mm

Power Dissipation-Max :

2W Ta

Width :

3.9878mm

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

55V

Turn On Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

43 ns

ECCN Code :

EAR99

Radiation Hardening :

No

Length :

4.9784mm

Rise Time :

10ns

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Dual Supply Voltage :

-55V

Continuous Drain Current (ID) :

-3.4A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Threshold Voltage :

-1V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Feature :

Schottky Diode (Isolated)

Resistance :

105mOhm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Number of Elements :

1

Configuration :

Single

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

RoHS Status :

RoHS Compliant

Power Dissipation :

2W

Packaging :

Tube

Voltage - Rated DC :

-55V

Drain to Source Breakdown Voltage :

-55V

Current Rating :

-3.4A

Nominal Vgs :

-1 V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±20V

Number of Pins :

8

Fall Time (Typ) :

22 ns

Published :

2004

Series :

FETKY™

Lead Free :

Lead Free