IRF7326D2PBF
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- Mfr.Part #
- IRF7326D2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 3.6A 8SO
- Stock
- 38,907
- In Stock ：
- 38,907
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -30V
- Power Dissipation-Max :
- 2W Ta
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 25 ns
- Current Rating :
- -3.6A
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 1.8A, 10V
- Power Dissipation :
- 2W
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- FET Feature :
- Schottky Diode (Isolated)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Ta
- Published :
- 2004
- Rds On Max :
- 100 mΩ
- Continuous Drain Current (ID) :
- -3.6A
- Number of Pins :
- 8
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Voltage - Rated DC :
- -30V
- Series :
- FETKY™
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- 8-SO
- Rise Time :
- 17ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Resistance :
- 160mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 440pF
- Fall Time (Typ) :
- 18 ns
- Threshold Voltage :
- -1V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Datasheets
- IRF7326D2PBF
P-Channel Tube 100mOhm @ 1.8A, 10V ±20V 440pF @ 25V 25nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7326D2PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 440pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -3.6A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 160mOhm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-1V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRF7326D2PBF Features
a continuous drain current (ID) of -3.6A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 160mOhm
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
IRF7326D2PBF Applications
There are a lot of Infineon Technologies
IRF7326D2PBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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