IRF7322D1TRPBF
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- Mfr.Part #
- IRF7322D1TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5.3A 8SO
- Stock
- 5,385
- In Stock ：
- 5,385
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 42 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- -20V
- Turn On Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Vgs (Max) :
- ±12V
- Length :
- 4.9784mm
- Continuous Drain Current (ID) :
- 5.3A
- Width :
- 3.9878mm
- FET Feature :
- Schottky Diode (Isolated)
- Input Capacitance :
- 780pF
- Series :
- FETKY™
- Power Dissipation :
- 2W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 49 ns
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 62mOhm @ 2.9A, 4.5V
- Published :
- 2004
- Height :
- 1.4986mm
- Rds On Max :
- 62 mΩ
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- Current Rating :
- -5.3A
- Drain to Source Voltage (Vdss) :
- 20V
- Gate to Source Voltage (Vgs) :
- 12V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 62mOhm
- Min Operating Temperature :
- -55°C
- Voltage - Rated DC :
- -20V
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 4.5V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2W Ta
- Max Operating Temperature :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- Number of Pins :
- 8
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 40ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 780pF @ 15V
- Supplier Device Package :
- 8-SO
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRF7322D1TRPBF
P-Channel Tape & Reel (TR) 62mOhm @ 2.9A, 4.5V ±12V 780pF @ 15V 29nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7322D1TRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 780pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 42 ns.This device has a drain-to-source resistance of 62mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.7V 4.5V), this device contributes to a reduction in overall power consumption.
IRF7322D1TRPBF Features
a continuous drain current (ID) of 5.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 62mOhm
a 20V drain to source voltage (Vdss)
IRF7322D1TRPBF Applications
There are a lot of Infineon Technologies
IRF7322D1TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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