IRF730STRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Published :

2013

Case Connection :

DRAIN

Fall Time (Typ) :

14 ns

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

Length :

10.67mm

Mounting Type :

Surface Mount

Height :

4.83mm

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Width :

9.65mm

Turn On Delay Time :

10 ns

Mount :

Surface Mount

Drain-source On Resistance-Max :

1Ohm

Weight :

1.437803g

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Number of Channels :

1

Rise Time :

15ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

38 ns

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

5.5A

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Power Dissipation-Max :

3.1W Ta 74W Tc

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

400V

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Number of Pins :

3

JESD-609 Code :

e3

Radiation Hardening :

No

Terminal Form :

Gull wing

Number of Elements :

1

Avalanche Energy Rating (Eas) :

290 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

22A

Packaging :

Tape and Reel (TR)